To cite this article: Rashid, M. J. et al. (2019). Simulation study of GaN/Al1-xGaxN quantum well (QW) operating in the UV region. J. Phys. Sci., 30(1), 25–32, https://doi.org/10.21315/jps2019.30.1.3
This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV region by varying different parameters. It is well known that the spontaneous and piezoelectric polarisations in wurtzite nitride heterostructures give rise to large built-in electric fields, which leads to an important consequence in the optical properties of GaN/Al1-xGaxN quantum wells. We first modelled the effect of electric field on the calculated electronic band structure. The increase in electric field affected the band structure for a fixed QW and barrier thickness. Then we investigated the effect of QW thickness on the bandgap energy for different electric fields. Afterwards, the Al composition (1-x) and Al1-xGaxN barrier thickness are varied for different well thickness with a fixed electric field.