ABSTRACT

This study explores the formation of thin heteroepitaxial multi-component
films (with a thickness of d ≤ 100 nm) on the surfaces of autoepitaxial silicon (Si) and
gallium arsenide (GaAs) through the processes of ion implantation and subsequent
annealing. Ion implantation involves introducing active elements into the material, which
can significantly alter its properties. The research identifies the types of compounds
formed during this process and examines the energy band parameters of the resulting
films. It was discovered that when low-energy ions of active metals are implanted, the
surface of GaAs becomes completely amorphous at a dose greater than (4–8)⋅1016 sm–2.
Additionally, recrystallisation during laser annealing initiates at energy densities between
(0.7 to 0.8) J·sm–². These findings are crucial for advancing semiconductor technologies,
as they provide insights into how the structural and electronic properties of semiconductor
materials can be manipulated. Understanding these processes opens new avenues for
developing more efficient electronic and optoelectronic devices, which are essential for
modern technology. Overall, this work contributes to the field of materials science by
enhancing our knowledge of thin film formation and properties.

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